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Si(100)衬底上制备液氮温区超导薄膜

胡倾宇 , 赵航炜 , 闻立时 , 王永忠 , 乔桂文

金属学报

本文报道用离子束溅射法在单晶Si(100)衬底上沉积YBaCuO超导薄膜的实验结果。Y稳定ZrO_2层作为衬底和超导膜的中间层,具有良好的扩散阻止效果。薄膜具有强烈的c轴织构,其化学组成接近123相。薄膜的超导起始转变温度为100K,零电阻温度为78K。

关键词: 超导 , thin film , Si substrate

离子束辅助沉积制备多晶Al_2O_3薄膜

王晨 , 杨杰 , 范玉殿 , 陶琨

材料研究学报

利用电子枪蒸镀Al_2O_3,同时辅以Ar 离子轰击的离子束辅助沉积方法(IBAD)制备Al_2O_3薄膜,并与单纯电子枪蒸镀方法(PVD)制备的薄膜进行了结构和表面形貌的比较。IBAD 法可以得到结构均匀致密的γ-Al_2O_3晶态薄膜,而PVD 方法仅能得到非晶态疏松的结构。分析结果表明,薄膜沉积过程中,提高离子轰击能量和增加基片加热温度在一定程度上具有相同的效果。

关键词: 离子束辅助沉积 , γ-Al_2O_3 , thin film

Antimony Induced Crystallization of Amorphous Silicon

Y. Wang , H.Z. Li , C.N. Yu , G.M. Wu , I. Gordon , P. Schattschneider , O. Van Der Biest , null , null , null , null , null , null , null , null , null , null

金属学报(英文版)

Antimony induced crystallization of PVD (physics vapor deposition) amorphous silicon can be observed on sapphire substrates. Very large crystalline regions up to several tens of micrometers can be formed. The Si diffraction patterns of the area of crystallization can be observed with TEM (transmission electron microscopy). Only a few and much smaller crystals of the order of 1μm were formed when the antimony layer was deposited by MBE (molecular beam epitaxy) compared with a layer formed by thermal evaporation. The use of high vacuum is essential in order to observe any Sb induced crystallization at all. In addition it is necessary to take measures to limit the evaporation of the antimony.

关键词: antimony , null , null , null

PREPARATION AND SURFACE CHARACTERIZATION OF TiO2 THIN FILMS ON GLASS BY MAGNETRON SPUTTERING METHOD

L.S. Yin

金属学报(英文版)

Ti thin films were firstly deposited on glass substrates by magnetron sputtering method,then sintered the Ti thin films in air atmosphere and finally TiO2 transparence thinfilms on glass substrates were obtained. The structure and surface morphologies ofthe thin films were characterized by X-ray diffraction and SEM. The growth processof the thin filns has been observed. The annealing time and annealing temperatureshave an affect on the growth of the films.

关键词: TiO2 , null , null , null

PREPARATION OF LN_2 TEMPERATURE REGION SUPERCONDUCTOR FILM ON Si(100) SUBSTRATE

HU Qingyu ZHAO Hangwei WEN Lishi WANG Yongzhong QIAO Guiwen Institute of Metal Research , Academia Sinica , Shenyang , China

金属学报(英文版)

Expermental results of the preparation of YBaCuO superconductor thin film on Si(100) substrate by the method of ion beam sputtering deposition is presented.A ZrO_2 buffer layer was applied to Si(100)substrate,and was found to play an important role in resisting the diffusion of Si toward the film.The thin film is mainly a 123 phase with strong c-axis prefer- red orientation.The onset transition temperature of the film is 100 K and the final transition temperature 78 K.

关键词: superconductor , null , null , null

层层自组装技术的研究进展及应用情况

张仲达 , 杨文芳

材料导报 doi:10.11896/j.issn.1005-023X.2017.05.007

层层自组装技术(Layer-by-layer self-assembly,LbL)是正处于发展阶段的新技术.与传统成膜技术相比,该技术能组装的材料多种多样(如聚电解质、纳米颗粒、有机小分子等),可以通过模板精确控制薄膜的表面结构和尺寸.薄膜的通透性能和力学性能可以通过控制组装材料、沉积层数、组装条件等来改善.对层层自组装技术的研究进展及应用情况进行了综述,较为详细地介绍了层与层之间作用力的研究进展,阐述了LbL技术在电化学电容器、光敏微胶囊、分离膜、生物化学及药物释放中的应用,并对LbL技术的发展前景进行了展望

关键词: 层层自组装 , 薄膜 , 电化学电容器 , 光敏微胶囊 , 分离膜 , 生物传感器 , 生物反应器 , 药物释放

STRUCTURE AND SURFACE STUDIES OF MgxZn1-xO FILMS GROWN BY PULSED LASER DEPOSITION

L.Zhuang , K.H.Wong

金属学报(英文版)

The structural and surface properties of high-quality epitaxial cubic MgxZn1-xO films deposited by pulsed laser deposition (PLD) were studied by X-ray diffraction and atomic force microscopy respectively. For films of about 500nm thick, scans over a 30μm × 30μm area revealed a surface roughness Ra of about 100nm. This relatively large surface roughness is primarily attributed to the particulate and outgrowth during the PLD process. A good epitaxial growth on LaAlO3 (LAO) (100) substrates, however has been obtained for composition x = 0.9, 0. 7 and 0.5 with the heteroepitaxial relationship of ( 100 ) MgxZn1-xO//(100)LAO (out-of-plane) and (011)MgxZn1-xO// (010)LAO (in-plane). These structural qualities suggest that cubic MgxZn1-xO alloys films have good potential in a variety of optoelectronic device applications.

关键词: pulsed laser deposition , null , null

恒电位法电沉积聚8-羟基喹啉薄膜

刘小勤 , 黄凤祥 , 曾冬铭 , 黄发军 , 刘中兴

电镀与涂饰

采用恒电位法在镀镍工件表面制备聚8-羟基喹啉薄膜.研究了沉积电位、8-羟基喹啉浓度、NaOH浓度、沉积时间等工艺条件对薄膜耐蚀性的影响.分别采用盐水周浸泡试验、三氯化铁缝隙试验和Tafel极化曲线法对比研究了恒电位法电沉积试样、循环伏安法电沉积试样和空白工件的耐蚀性.采用扫描电镜表征了聚8-羟基喹啉薄膜的表面形貌.恒电位法沉积的最佳工艺条件为:8-羟基喹啉2 mmol/L,NaOH 0.4 mol/L,电位0.5 V,时间300 s,室温.采用最佳工艺所得薄膜的耐蚀性略优于循环伏安法试样,远优于空白工件.

关键词: 镀镍层 , 8-羟基喹啉 , 薄膜 , 聚合 , 电沉积 , 恒电位法 , 耐蚀性

氟掺杂纳米TiO_2薄膜的低温制备及其光催化性能

陈艳敏 , 钟晶 , 陈锋 , 张金龙

催化学报 doi:10.3724/SP.J.1088.2010.90719

以氟化铵为氟源,采用水热法制得氟掺杂TiO_2(FTO)溶胶,并通过浸渍提拉法在低温下制备了FTO薄膜.其中在120℃下水热处理10h所得的TiO_2溶胶制备的薄膜均匀透明,具有较高的光催化活性.氟掺杂后的TiO_2晶粒尺寸并未发生明显变化,但薄膜的光催化活性显著升高.F/Ti摩尔比为0.01时,FTO薄膜的光催化活性最高,比TiO_2薄膜的活性升高了23%.X射线光电子能谱结果表明,氟掺杂TiO_2中的氟离子存在晶格取代掺杂和表面化学吸附两种形式.这两种氟离子的共同作用是FTO薄膜光催化活性升高的主要原因.

关键词: , 掺杂 , 二氧化钛 , 薄膜 , 光催化 , 罗丹明B , 降解

金刚石镀氧化钇增透膜系的设计与研究

刘其军 , 刘正堂 , 闫锋

电镀与涂饰

为了提高金刚石的红外透过率,根据光干涉膜基础理论对薄膜增透进行了设计,获得了增透膜系的相关参数,并采用非规整设计中的彻底搜索法对所设计的膜系进行了增透效果分析.结果表明,在金刚石衬底上单面和双面镀Y_2O_3膜系后,透过率有明显提高.Y_2O_3膜系是性能优异的金刚石红外光学材料增透膜.

关键词: 金刚石 , 氧化钇 , 薄膜 , 射频磁控反应溅射 , 增透 , 红外透过率 , 设计

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